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POWER GaN HEMTs - PERFORMANCE AND RELIABILITY

Dr. Clement Fleury, CTR

Abstract: The miniaturization of integrated circuits has made microelectronics devices better and better in many ways, but also more and more prone to failure caused by unwanted electrical stresses, as power density increases. The reliability of Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) has been investigated in terms of vertical breakdown, degradation of the conducting and blocking performance at high temperature and short-circuit load conditions. Their behaviour under pulsed stress conditions (ESD and short circuit load) was studied with the TIM technique, which allows to probe heat dissipation and free carrier concentration through their effect on the refractive index of the material.

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